Invited Speaker

Dr. Bablu K. Ghosh

Dr. Bablu K. Ghosh

Faculty of Engineering, University Malaysia Sabah, Malaysia
Speech Title: Influence of Free and Binding Energy of Donor-acceptor Hetero-interface Organic Solar Cells

Abstract: Cost-effective design purpose alternative of Si-based hetero-junction, organic bulk hetero-junction (BHJ) and planner hetero-junction (PHJ) solar cells have greater energy potential. The current challenge is to develop greater open-circuit voltage (Voc) of BHJ. Though it can be partly overcome by applying interface materials but dark injection, traps and non-radiative recombination are key impediments to promote electrical performance. One of the alternatives is the development of a profound interface and it could make a variation of donor-acceptor (D-A) interface barrier. Its influences on electrical output is a significant pathway to develop OSC energy conversion performance. Acceptor greater energy offset may increase carrier lifetime or Voc and it could able to reduce thermal diffusion/injection current. However, it has a potential influence on the contact barrier of charge transport and it may reduce fill factor and current density. Driving force and recombination models temperature effect can’t be identified the Voc loss properly. The carrier transport barrier and charge transfer states (CTS) how is varied with temperature and D-A interface binding energy is the key question. The acceptor energy barrier due to Fermi-level has potential influence by D-A interface binding effects. To decline dark injection the acceptor barrier and binding effect lessening is potential. Thus binding energy and temperature effects on CTS is still an open debate. Thus driving force and binding energy inter-relationship with temperature associated activation energy are central to deliver charge transport and Voc loss.